Radiation damage and defects in semiconductors /

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Detalles Bibliográficos
Autores Corporativos: Institute of Physics (Great Britain), International Union of Pure and Applied Physics, United States. Air Force
Formato: Libro
Lenguaje:Inglés
Publicado: London : Institute of Physics, [1973]
Colección:Conference series ; no. 16
Materias:
Aporte de:Registro referencial: Solicitar el recurso aquí
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245 0 0 |a Radiation damage and defects in semiconductors /  |c proceedings of the international conference organized by the Institute of Physics and sponsored by the International Union of Pure and Applied Physics and the United States Air Force, held at the University of Reading, 19-21 July 1972. 
260 # # |a London :  |b Institute of Physics,  |c [1973] 
300 # # |a xi, 458 p. :  |b il. ;  |c 26 cm. 
490 1 # |a Conference series ;  |v no. 16 
504 # # |a Incluye referencias bibliográficas. 
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710 2 # |a Institute of Physics (Great Britain) 
710 2 # |a International Union of Pure and Applied Physics. 
710 1 # |a United States.  |b Air Force. 
810 2 # |a Institute of Physics (Great Britain) ;  |t Conference series  |v no. 16. 
650 # 0 |a Semiconductors  |x Effect of radiation on  |v Congresses. 
650 # 0 |a Crystals  |x Defects  |v Congresses. 
653 # # |a Semiconductors  |a Effects of ionising radiation Conference proceedings 
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