Charge trapping/detrapping in HfO2-based MOS devices

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The charge trapping/detrapping under normal operating conditions in MOS devices with HfO2 as insulating layer is studied. The hysteresis in the capacitance-voltage curves was analyzed and the voltage for a given capacitance was tracked in time. A simple tunneling front model is proposed in order to...

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Detalles Bibliográficos
Autores principales: Salomone, L.S., Carbonetto, S.H., Inza, M.A.G., Lipovetzky, J., Redín, E.G., Campabadal, F., Faigón, A.
Formato: CONF
Materias:
High-K gate dielectrics
hysteresis
MOS devices
Capacitance-voltage curve
Charge trapping/detrapping
High-k gate dielectrics
Insulating layers
Normal operating conditions
Physical parameters
Capacitance
Gate dielectrics
Hafnium oxides
Hysteresis
Nanoelectronics
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_97898716_v_n_p113_Salomone
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
Descripción
Sumario:The charge trapping/detrapping under normal operating conditions in MOS devices with HfO2 as insulating layer is studied. The hysteresis in the capacitance-voltage curves was analyzed and the voltage for a given capacitance was tracked in time. A simple tunneling front model is proposed in order to reproduce the observed curves and to obtain the relevant physical parameters. © 2011 EDIUNS.

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