Cita APA (7a ed.)

Salomone, L., Carbonetto, S., Inza, M., Lipovetzky, J., Redín, E., Campabadal, F., & Faigón, A. Charge trapping/detrapping in HfO2-based MOS devices.

Cita Chicago Style (17a ed.)

Salomone, L.S, S.H Carbonetto, M.A.G Inza, J. Lipovetzky, E.G Redín, F. Campabadal, y A. Faigón. Charge Trapping/detrapping in HfO2-based MOS Devices.

Cita MLA (8a ed.)

Salomone, L.S, et al. Charge Trapping/detrapping in HfO2-based MOS Devices.