Manganite-based memristive heterojunction with tunable non-linear I-V characteristics

A resistive random access memory (ReRAM) based on the memristive effect allows high-density integration through a cross-point array (CPA) structure. However, a significant common drawback of the CPA configuration is the crosstalk between cells. Here, we introduce a solution based on a novel heteroju...

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Detalles Bibliográficos
Autores principales: Lee, H.-S., Park, H.-H., Rozenberg, M.J.
Formato: JOUR
Materias:
Heterojunctions
Manganese oxide
Manganites
Nonvolatile storage
Cross-point array
High-density integration
Non linear
Non-linear I-V
Perovskite manganites
Redox mechanism
Resistive Random Access Memory (ReRAM)
Resistive switching
Random access storage
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_20403364_v7_n15_p6444_Lee
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

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