Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures

We report on the growth and characterization of Ti/La1/3Ca3/2MnO3/SiO2/n-Si memristive devices. We demonstrate that using current as electrical stimulus unveils an intermediate resistance state, in addition to the usual high and low resistance states that are observed in the standard voltage control...

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Detalles Bibliográficos
Autores principales: Román Acevedo, W., Acha, C., Sánchez, M.J., Levy, P., Rubi, D.
Formato: JOUR
Materias:
Heterojunctions
Manganese oxide
Switching systems
Current voltage curve
Electrical characterization
Electrical response
Fabrication procedure
Impedance spectroscopy
Intermediate resistance
Low-resistance state
Resistive switching
Memristors
Acceso en línea:http://hdl.handle.net/20.500.12110/paper_00036951_v110_n5_p_RomanAcevedo
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

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