A measurement of the ionization efficiency of nuclear recoils in silicon

We have measured the ionization efficiency of silicon nuclear recoils with kinetic energy between 1.8 and 20 keV. We bombarded a silicon-drift diode with a neutron beam to perform an elastic-scattering experiment. A broad-energy neutron spectrum was used and the nuclear recoil energy was reconstruct...

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Guardado en:
Detalles Bibliográficos
Autor principal: Tiffenberg, Javier
Publicado: 2017
Materias:
Dark Matter detectors (WIMPs, axions, etc.)
Instrumentation and methods for time-of-flight (TOF) spectroscopy
Neutron detectors (cold, thermal, fast neutrons)
Solid state detectors
Ionization
Kinetic energy
Kinetics
Semiconductor detectors
Silicon
Dark matter detectors
Fast neutrons
Ionization efficiency
Scattering angles
Silicon drift-diodes
Theory predictions
Time of flight
Neutrons
Acceso en línea:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_17480221_v12_n6_p_Izraelevitch
http://hdl.handle.net/20.500.12110/paper_17480221_v12_n6_p_Izraelevitch
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

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