Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation

MIS capacitance structures, with Hafnium Oxide, Alumina and nanolaminate as dielectrics were studied under gamma photons 60Co, 25 MeV oxygen ions and 10 MeV protons radiation using capacitance-voltage (C-V) characterization. © 2012 IEEE.

Guardado en:
Detalles Bibliográficos
Publicado: 2012
Materias:
High-k gate dielectrics
MOS devices
radiation effects
Capacitance voltage
Comparative analysis
Gamma photons
High-k dielectric
Nanolaminate
Oxygen ions
Alumina
Hafnium oxides
Radiation effects
Capacitance
Acceso en línea:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00189499_v59_n4PART1_p767_Quinteros
http://hdl.handle.net/20.500.12110/paper_00189499_v59_n4PART1_p767_Quinteros
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
Descripción
Sumario:MIS capacitance structures, with Hafnium Oxide, Alumina and nanolaminate as dielectrics were studied under gamma photons 60Co, 25 MeV oxygen ions and 10 MeV protons radiation using capacitance-voltage (C-V) characterization. © 2012 IEEE.

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