Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry
In this paper the influence of temperature fluctuations on the response of thick gate oxide metal oxide semiconductor dosimeters is reviewed and the zero temperature coefficient (ZTC) method is evaluated for error compensation. The response of the ZTC current to irradiation is studied showing that t...
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2011
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Acceso en línea: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00189499_v58_n6PART2_p3348_Carbonetto http://hdl.handle.net/20.500.12110/paper_00189499_v58_n6PART2_p3348_Carbonetto |
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Sumario: | In this paper the influence of temperature fluctuations on the response of thick gate oxide metal oxide semiconductor dosimeters is reviewed and the zero temperature coefficient (ZTC) method is evaluated for error compensation. The response of the ZTC current to irradiation is studied showing that the error compensation impoverishes with absorbed dose. Finally, an explanation and analytic expression for the shifts in the ZTC current with irradiation based on the interface traps creation is proposed and verified with experimental data. © 2011 IEEE. |
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